Copper doped Titanium dioxide (Cu-TiO2) thin films have been deposited onto the microscopic glass substrates by sol-gel dip coating method. The influence of annealing temperature was studied by X-ray diffraction method (XRD), Scanning Electron Microscopy (SEM) with Energy Dispersive X-ray Analysis (EDAX), UV-Vis absorption spectroscopy (UV-Vis-NIR), and Photoluminescence (PL) study. The XRD study revealed that Cu doped TiO2 thin films have anatase phase with dominant (1 0 1) orientation. The crystallite size was found to increase with increase in annealing temperature. Morphological studies showed that the grains were agglomerated and island like structure over the entire surface of the substrate. The elementary compositions of the films were observed by EDAX spectrum. The UV-Visible spectral analysis showed that the calculated band gap values were found to decrease with increase in annealing temperature. Intense blue and green emissions were observed in photo luminescence spectrum at room temperature with excitation at 410 nm. These results suggest that the increase in annealing temperature is an important parameter for the improvement of structural quality of Cu - TiO2 thin films derived by sol-gel dip coating technique.