Free standing nanostructurewas fabricatedbydepositing thin cadmium selenide (CdSe)layer with the hetero-structured SiOx material in multilayer arrangement.The characteristics and compatibility of confined CdSenanocrystals (NCs)in type-II band alignments were systematically analyzed. The trapping mechanism of surface valleys present in SiOx matrix was revealed from optical studies. The calculated micro-strainin multilayer (ML) heaped arrangement gets indirectly related with the size of the crystallites. The particle size was calculated as 2.5 nm for the prepared sample which is lesser than the respective Bohr-exciton radius. HRTEM images revealed the formation of CdSequantum dots with spherical and oval shapes. The absorption and emission spectra of confirmed the splitting of energy levels which arises due to quantum confinement effect.The simple method of preparation of quantum dot networks for the application of optoelectronic devices wasdistinctly elucidated with stronginterpretations.